Formation of silicon layer through aluminothermic reduction of quartz substrates

نویسندگان

چکیده

Silicon (Si) films were obtained through aluminothermic reduction of the quartz (SiO 2 ) substrates, where surface in contact with deposited aluminum (Al) layer has been converted to film Si during high-temperature annealing following reaction. X-ray diffraction (XRD) patterns and Raman spectra show dominating peaks corresponding elemental films. Energy dispersive spectroscopy (EDS), as well XRD layer, suggests that products consist mainly mixed oxides Al-related phases. Both higher reaction temperature high initial Al-content (larger thickness Al Al/SiO structure), studied this paper, found favor obtaining contents Thus, crystallinity quality Si-layer improve increase both confirmed by spectra. The mechanism discussed using a ternary phase diagram constituent elements, from EDS data. Crystalline nature (nanocrystal microcrystal polycrystal) crystalline layers be affected on SiO substrates.

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ژورنال

عنوان ژورنال: Frontiers in Materials

سال: 2022

ISSN: ['2296-8016']

DOI: https://doi.org/10.3389/fmats.2022.977869